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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1133 2SD1134 DESCRIPTION *With TO-220C package *Complement to type 2SB857/858 APPLICATIONS *For low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SD1133 VCEO Collector-emitter voltage 2SD1134 VEBO IC ICP PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 60 5 4 8 40 150 -45~150 V A A W CONDITIONS Open emitter VALUE 70 50 V UNIT V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SD1133 IC=50mA; RBE=; 2SD1134 IC=10A; IE=0 IE=10A; IC=0 IC=2 A;IB=0.2 A IC=1A ; VCE=4V VCB=50V; IE=0 IC=1A ; VCE=4V IC=0.1A ; VCE=4V IC=0.5A ; VCE=4V CONDITIONS 2SD1133 2SD1134 SYMBOL MIN 50 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 60 70 5 1.0 1.0 1 60 35 7 MHz 320 V V V V A V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Transition frequency hFE-1 classifications B 60-120 C 100-200 D 160-320 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1133 2SD1134 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1133 2SD1134 4 |
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